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High accuracy 65nm OPC verification: full process window model vs. critical failure ORC
2005
Optical Microlithography XVIII
It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become indispensable tools for ensuring that OPC delivers robust patterning. However the
doi:10.1117/12.600471
fatcat:2styr3nnlnfyhpvmqc77ejrlca