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High-quality quantum point contacts in GaN∕AlGaN heterostructures
2005
Applied Physics Letters
Preserved Fulltext
We study the transport properties of quantum point contacts in a GaN / AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of "0.7 structure" which has been mainly investigated in the GaAs system.
doi:10.1063/1.1862339
fatcat:bvjmozo2nffi3g7ys3rxy673tm