High-quality quantum point contacts in GaN∕AlGaN heterostructures

H. T. Chou, S. Lüscher, D. Goldhaber-Gordon, M. J. Manfra, A. M. Sergent, K. W. West, R. J. Molnar
2005 Applied Physics Letters  
We study the transport properties of quantum point contacts in a GaN / AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of "0.7 structure" which has been mainly investigated in the GaAs system.
doi:10.1063/1.1862339 fatcat:bvjmozo2nffi3g7ys3rxy673tm