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RAD Association Journal
High response speed sensors made of thin GaN-based structures can be important for the optical readout of the radiation signals in harsh radiation environment at hadron accelerator facilities. In this work, the metalsemiconductor-metal structure sensors formed on the MOCVD grown GaN heterostructures have been studied. The proton-induced luminescence (PI-L) and the BELIV (barrier evaluation by linearly increasing voltage) transients have simultaneously been recorded during 1.6 MeV protondoi:10.21175/radj.2017.02.025 fatcat:c2x3vsnu4vej7lw5nb33jf6xcu