High response speed sensors made of thin GaN-based structures can be important for the optical readout of the radiation signals in harsh radiation environment at hadron accelerator facilities. In this work, the metalsemiconductor-metal structure sensors formed on the MOCVD grown GaN heterostructures have been studied. The proton-induced luminescence (PI-L) and the BELIV (barrier evaluation by linearly increasing voltage) transients have simultaneously been recorded during 1.6 MeV proton

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... ion emitted by a Tandetron type accelerator. The PI-L and BELIV measurements allowed for tracing the evolution of the parameters of recombination. The radiation damage on GaN-based sensors has been examined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. The dominant radiation defects introduced by 1.6 MeV proton beam have been unveiled.