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GaN初期成長におけるSi-ドーピング,GaNテンプレートの効果(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)
Effect of Si-Doping and GaN-Template for GaN Initial Growth(The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)
2003
Journal of the Japanese Association for Crystal Growth
Effect of Si-Doping and GaN-Template for GaN Initial Growth(The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)
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