Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

F. Faccio, M. Bianchi, M. Fornasari, E.H.M. Heijne, P. Jarron, G. Rossi, G. Borel, J. Redolfi
1994 IEEE Transactions on Nuclear Science  
The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation ( 60 Co). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias
more » ... applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. The p-channel transistors have very low 1/f noise and are less sensitive to irradiation effects.
doi:10.1109/23.340581 fatcat:hcgrdf2iprcxvk3ixml3kh2hse