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Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)
1994
IEEE Transactions on Nuclear Science
Preserved Fulltext
The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation ( 60 Co). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias
doi:10.1109/23.340581
fatcat:hcgrdf2iprcxvk3ixml3kh2hse