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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel diode MOSFET with a center P+ implanted structure (CIMCD–MOSFET) is proposed and simulated via technology computer-aided design (TCAD). The CIMCD–MOSFET contains a P+ center implant region, which protects the gate oxide edge from high electric field crowding. Moreover,doi:10.3390/en15196960 fatcat:azk2427wnjdxvanqhtks763lmy