A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf.
High performance inverted bulk heterojunction solar cells by incorporation of dense, thin ZnO layers made using atmospheric atomic layer deposition
2013
Solar Energy Materials and Solar Cells
Preserved Fulltext
A thin ZnO ( o 200 nm) film grown by Atmospheric Atomic Layer Deposition (AALD) in a matter of minutes was studied as a hole-blocking layer in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61buyric acid methyl ester (P3HT:PCBM) based inverted solar cells. These AALD ZnO layers were compact, had a high electron mobility of 3.4+0.1 cm 2 /Vs, had up to 100% transmittance to visible light, and a good wettability for the blend. Despite the very rapid, open atmosphere growth method, the cell
doi:10.1016/j.solmat.2013.04.020
fatcat:q2eeholtire7vghvqviyqqbl54