A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
Metrology, Inspection, and Process Control for Microlithography XIX
Specular-mode spectroscopic scatterometry is currently being used as an in-line metrology tool for wafer-to-wafer process monitoring and control in lithography and etch processes. Experimental real-time, in situ demonstrations of critical dimension monitoring and control have been made for reactive ion etching. There have been no similar demonstrations of real-time control in the critical step of resist development. In this paper, we will show the results of a simulation study on the use ofdoi:10.1117/12.599135 fatcat:xw43mqvgizcqjckxjxe2tunvea