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Temperature-induced epitaxial growth modes of para-sexiphenyl on Au(111)
2006
Physical Review B
We focus on the epitaxial growth of para-sexiphenyl on a Au͑111͒ single-crystal surface. The films are prepared by molecular beam epitaxy at different temperatures ͑300 K, 330 K, and 430 K͒, and their thicknesses are 30 nm. X-ray diffraction investigations of these films show that the growth is strongly dependent on the substrate temperature. Lying molecules are always observed and lead to sexiphenyl crystals with their ±͑21-3͒ plane parallel to the surface which corresponds to flat-on
doi:10.1103/physrevb.74.045419
fatcat:3iazvq3ebzgqvjbnqnwvrhzmcm