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Analytical model and Monte Carlo Simulations for Phosphorus implantation in Germanium including ion channeling
2008
2008 International Conference on Simulation of Semiconductor Processes and Devices
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A Monte Carlo Simulator for dopant implantation (TaurusMC) was successfully calibrated for the implantation of Phosphorus in Germanium, based on both SIMS measurements and TEM. To avoid time-consuming Monte Carlo simulations, an analytical model was proposed based on the description of asimplanted profiles with a dual Pearson curve. This model covers a large range of energy (15-180 keV) and doses (10 12 -10 16 cm −2 ), of interest to the ongoing scaling efforts of Ge MOSFETs.
doi:10.1109/sispad.2008.4648285
fatcat:uv65czeuc5bgpos4tkq6tc5hny