A simple MOSFET model for circuit analysis

T. Sakurai, A.R. Newton
1991 IEEE Transactions on Electron Devices  
A simple, general, yet realistic MOSFET model, namely the nth power law MOSFET model, is introduced. The model can express I-V characteristics of short-channel MOSFET's at least down to 0.25-pm channel length and resistance inserted MOSFET's. The model evaluation time is about 1 / 3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure
more » ... tting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and plays a role of a bridge between a complicated MOSFET current characteristics and circuit behavior in the deep-submicrometer region.
doi:10.1109/16.75219 fatcat:5qizrrqvcnfp3p46goxd5lyleu