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A simple, general, yet realistic MOSFET model, namely the nth power law MOSFET model, is introduced. The model can express I-V characteristics of short-channel MOSFET's at least down to 0.25-pm channel length and resistance inserted MOSFET's. The model evaluation time is about 1 / 3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting proceduredoi:10.1109/16.75219 fatcat:5qizrrqvcnfp3p46goxd5lyleu