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Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured
2009
IEEE Electron Device Letters
Preserved Fulltext
AlGaInP-based metal-bonding light-emitting diodes (LEDs) with micro-and nanoscale textured surface were investigated. The device surface with microbowls and nanorods were formed by a chemical wet-etching and dry-etching technique for enhancing light-extraction purpose. The luminous intensity could be enhanced 65.8% under 20-mA current injection as compared with the plane surface LEDs. The maximum wall-plug efficiency was achieved 14.1% at 7.5-mA operation.
doi:10.1109/led.2009.2028445
fatcat:ihhgruel4vdqbow3ud7rzw6xty