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An analysis of strong-coupling effects in carrier-carrier scattering in electron-hole plasmas in semiconductors is presented. The conventional approach to scattering and dephasing rates is based on the Born approximation ͑a scattering cross section proportional to the square of the dynamically screened interaction potential͒, and is strictly valid only in the limit of the weakly coupled quantum plasma. Otherwise, strong correlations are expected to become important in the scattering quantities.doi:10.1103/physrevb.59.10639 fatcat:vepcefevl5boljsv2hpatq55ci