High-performance, reliable, 730-nm-emitting Al-free active region diode lasers

A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, L. J. Mawst
1998 Applied Physics Letters  
Compressively strained InGaAsP quantum well ͑QW͒ active ͑ϭ732 nm͒ diode lasers achieve 2.9 W continuous wave ͑cw͒ power from facet-coated ͑4%/95%͒ 100-m-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/⌫ϭ0.433 m͒, resulting in a low internal loss (␣ i ϳ2 cm Ϫ1 ) and narrow transverse far-field beam width ( 1/2 ϭ38°). Record-high characteristic temperatures for the threshold current and the
more » ... rrent and the differential quantum efficiency (T 0 ϭ115 K and T 1 ϭ285 K͒ are obtained by growing on misoriented substrates.
doi:10.1063/1.122613 fatcat:sckmluum2jamjijhue4hxtzexm