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A comparative study of electronic transport properties of p-Si wafers intentionally contaminated with Fe was performed using infrared photothermal radiometry ͑PTR͒ and microwave photoconductance decay ͑-PCD͒. Strong correlations were found between PTR and -PCD lifetimes in a lightly contaminated wafer with no significant PTR transient behavior. The absolute PTR lifetime values were larger than the local averaged -PCD values, due to the different excitation wavelengths and probe depths. In adoi:10.1063/1.373506 fatcat:hcv67avhxzhfvgtti3vb6mfs5u