On Liquid-Phase Deposition of Silicon Dioxide by Boric Acid Addition

Peng-Heng Chang
1997 Journal of the Electrochemical Society  
The current status of liquid-phase deposition (LPD) of Si02 by adding boric acid (H3B03) to a hydrofluosilicic acid (H2SiF6) is reviewed and compared with some new results from the authors' laboratory Large discrepancies exist in the literature concerning the effects of various processing parameters on deposition rate. We have shown that much confusion arises from the misconception of using on 5i03 additive to "saturate" and usng water to "dilute" the growth solution. In this paper the role of
more » ... paper the role of 1120 as a reagent and the detrimental effect of an 5i02 additive as seeds for depleting the nutrient in the growth solution if added after the H30 addition are emphasized. Despite the variations between different investigators, the following characteristics of the LPD process are in general agreement: (i) the deposition process is surface controlled, (ii) the deposition rate depends approximately linearly on temperature, (iii) the deposition rate is constant (independent of time) over a wide range of experimental conditions, and (iv) the deposition rate increases with increasing boric acid concentration. The recently developed liquid-phase deposition (LPD) process ailows the selective growth of thin 5i03 films on suitable substrates at very low temperatures (20 to 50°C).'-2' ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see Downloaded on 2014-04-28 to IP
doi:10.1149/1.1837547 fatcat:ic4ztnf53bf2dpssxwjrjwjgdq