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In this work metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures usingPb1.1Zr0.40Ti0.60O3(PZT) as the ferroelectric layer and zinc oxide (ZnO) as the insulator layer were fabricated on n-type (100) Si substrate.Pb1.1Zr0.40Ti0.60O3and ZnO thin films were prepared on Si by the sol-gel route and thermal deposition method, respectively. On the optimized PZT (140 nm) and ZnO (40 nm) films were examined by scanning electron microscope (SEM). From AFM data the root mean squaredoi:10.1155/2013/692364 fatcat:hrzci43znnfqxd57lpr7ygqgfy