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2004 IEEE International Conference on Semiconductor Electronics
A new wavelet based non-uniform grid for time domain simulation of active semiconductor devices is presented and a MESFET is simulated using this non-uniform mesh. Non-uniform mesh is implemented and controlled by the wavelet coefficients. A fine mesh can be used where the unknowns are varying rapidly and a coarser mesh where the unknowns are varying slowly. Performance of this method is compared with basic finite difference. A reduction over 80 percent of unknowns in grid with good accuracy indoi:10.1109/smelec.2004.1620889 fatcat:tkandiegejd6phsj4x2numt3su