Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires

Benito Alén, Juan Martı́nez-Pastor, Alberto Garcı́a-Cristobal, Luisa González, Jorge M. Garcı́a
2001 Applied Physics Letters  
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
doi:10.1063/1.1379991 fatcat:a57yjy5zzfaxxdjvsenw2q2jva