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Optically excited THz-radiation from ten molecular-beam epitaxy (MBE)-grown strained multiple quantum wells (MQWs) on a (100)-oriented semi-insulating GaAs substrate is studied in a 1-T magnetic field. Wavelength-dependent THz-radiation clearly exhibits a resonance behavior at the excitation wavelength near 830 nm, the peak wavelength of photoluminescence (PL). We also observe and explain an emission spectrum from the MQW with slightly enhanced higher-frequency components compared to that ofdoi:10.1143/jjap.40.l681 fatcat:pku6q6hkyvgpne2wk366lf4y4q