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Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implantedc-Si
2013
Physical Review Letters
Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural
doi:10.1103/physrevlett.111.105502
pmid:25166679
fatcat:yfhaijzdobej7gzvwg7fkue3ca