Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implantedc-Si

Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte
2013 Physical Review Letters  
Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural
more » ... n over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations.
doi:10.1103/physrevlett.111.105502 pmid:25166679 fatcat:yfhaijzdobej7gzvwg7fkue3ca