Cite this article as MRS Internet J. Nitride Semicond. Res., 4S1, G3.73 (1999) ABSTRACT Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D 2 into bubbles. At low D

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... , bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.