In this work the results of the deposition and characterization of thin films of zinc oxide (ZnO), obtained by means of sputtering by radiofrequency plasma (RF sputtering), are carried out at room temperature (25 °C to 30 °C) on glass substrates. The objective of this work is to develop a controlled deposition sequence of the films, varying and correlating all the process parameters involved, such as: process pressure, rate and deposition time, flow rate and gas composition of process, self

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... between target and substrate, in order to guarantee the reproducibility of the process, obtaining through this, films with thickness and crystalline phase well defined, of high transparency in the band of the visible aiming mainly the application in devices optoelectronics. The films were characterized by X-ray diffraction (XRD) techniques to obtain the crystalline phases, spectrophotometry in the UV-visible band to determine transmittance levels and optical band gap of films, scanning electron microscopy (SEM) to reveal the morphology of the films and the mechanical profilometry to measure the respective thicknesses. The results obtained showed good results for transmittance in the UV-visible range (greater than 90%). The optical band gap of all conforms to the expected values for ZnO films. The X-ray diffraction together with SEM images revealed the strong influence of the presence of oxygen in the gas deposition mixture on the quality of the morphology and crystallinity of the samples.