In single crystals of titanium was studied deuterium segregation induced by ion irradiation. Segregation created at room temperature deuterium ion implantation energy of 700 keV and analyzed by the nuclear reaction D (d, p) T. During the experiment changed the duration of continuous exposure and the duration of stops. It was found that with increasing radiation dose continuous average concentration of the implant in the irradiated volume gradually increases. It has been found that a long

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... ption of ion bombardment leads to an abrupt increase of the concentration. Analysis of the depth distribution of deuterium showed that during stopping the accumulation of radiation near the surface of the implant due to the redistribution of the target volume. The obtained results are discussed in terms of the evolution of the defect structure of the target in the course of continuous exposure and stop time of implantation.