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Ultrafast Vibrational Dynamics and Stability of Deuterated Amorphous Silicon
2002
Physical Review Letters
Infrared four-wave mixing experiments performed upon deuterated amorphous silicon layers (a-Si : D) reveal profound differences in the dynamics of Si-D stretch vibrations compared to those of analogous Si-H vibrational modes in hydrogenated amorphous silicon (a-Si : H). Remarkably, transient-grating measurements of the population decay rate of the Si-D vibrations show single-exponential decay directly into collective modes of the a-Si host, bypassing the local bending modes of the defect into
doi:10.1103/physrevlett.89.125504
pmid:12225097
fatcat:kuziuzrwdvfwblewtkrcy6qjjy