Dual input AND gate fabricated from a single channel poly(3-hexylthiophene) thin film field effect transistor

N. J. Pinto, R. Pérez, C. H. Mueller, N. Theofylaktos, F. A. Miranda
2006 Journal of Applied Physics  
A regio-regular poly͑3-hexylthiophene͒ ͑RRP3HT͒ thin film transistor having a split gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or −10 V to each of the gate electrodes. When −10 V was simultaneously applied to both gates, the device was conductive ͑on͒, while any other combination of gate voltages rendered the device resistive
more » ... device resistive ͑off͒. The p-type carrier charge mobility was about 5 ϫ 10 −4 cm 2 / V s. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate nonplanarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.
doi:10.1063/1.2188131 fatcat:zcpoqgggovcnfd6xg55sgvzflq