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The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned "comb structures" are deposited on dielectric films and exposed to synchrotron radiation in the range of 8-25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limitingdoi:10.1063/1.4817427 fatcat:zsbtujibqvbp3bzjvrljroa5y4