Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

H. Zheng, M. T. Nichols, D. Pei, Y. Nishi, J. L. Shohet
2013 Journal of Applied Physics  
The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned "comb structures" are deposited on dielectric films and exposed to synchrotron radiation in the range of 8-25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting
more » ... ficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge. V C 2013 AIP Publishing LLC. [http://dx.
doi:10.1063/1.4817427 fatcat:zsbtujibqvbp3bzjvrljroa5y4