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In situ TEM study of dislocation mobility in semiconducting materials

F. Louchet, J. Pelissier, D. Caillard, J.P. Peyrade, C. Levade, G. Vanderschaeve
1993 Microscopy Microanalysis Microstructures  

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2014 Des expériences de déformation in situ de semiconducteurs élémentaires, et de composés III-V et II-VI, ont été réalisées à Toulouse et Grenoble. Cet article donne une interprétation commune des résultats obtenus, ce qui permet de discuter l'effet de la force des liaisons covalentes sur les mobilités des dislocations dans divers cas de figure. Abstract. 2014 In situ straining experiments have been conducted in Toulouse and Grenoble on elemental semiconductors, III-V and II-VI compounds.
more » ... article gives a common interpretation of the results obtained, which allows us to discuss the effect of the strength of covalent bonding on the mobility of dislocations under different conditions.
doi:10.1051/mmm:0199300402-3019900 fatcat:mrmgwvnki5fppgxbtt3rifcrbi
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F. Louchet, J. Pelissier, D. Caillard, J.P. Peyrade, C. Levade, G. Vanderschaeve. "In situ TEM study of dislocation mobility in semiconducting materials." Microscopy Microanalysis Microstructures 4.2-3 (1993) 199-210