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Circuit design with a commercial 0.13 $\mu$m CMOS technology for high energy physics applications
[article]
2003
Preserved Fulltext
Circuits designed in a commercial 0.13 µm CMOS technology were evaluated in view of the potential use of this technology for high energy physics applications. Prototypes of a bandgap voltage reference, a static random access memory, and a time to digital converter are presented and the consequences of total dose irradiation and single event upsets are evaluated.
doi:10.5170/cern-2003-006.71
fatcat:od6y6u5fwzggbk2nl6ant4lyqa