Using high-resolution atomic force microscopy, we have shown extremely high stability of linear ferroelectric domains in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films heated up to 735°C, a significant advantage for technological applications. An elevated transition temperature ϳ785°C is observed even in relatively thick ͑91 nm͒ films, despite relaxation of in-plane film-substrate lattice-mismatch-induced strain. We also demonstrate the negligible role of the film surface in determining the written

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... main-wall configuration, both by direct comparison of the surface roughness with domain-wall position at successive thermal cycles, and by measurements of domain-wall dynamics before and after heating.