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Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation
2014
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform, realistic transition frequency (fT) and propagation delay of 9-stage ring oscillators are
doi:10.1109/sispad.2014.6931555
fatcat:top47dzqcnhz7irvyfo3qqzrbq