Precise surface preparation techniques to make atomically flat and defect-free SiC surfaces are strongly demanded in the next-generation semiconductor technology. However, effective technique dose not exist particularly for surface smoothing. EEM (Elastic Emission Machining) is a precise surface preparation technique utilizing chemical reactions between solid surfaces. In this work, a step-bunched SiC was prepared as the initial surface, and was flattened by EEM. Obtained surfaces were observed

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... and characterized using an optical interferometer and atomic force microscopy (AFM). Obtained images show that the topmost areas on the periodic step-bunched structure in contact with the SiO 2 particles are preferentially removed and surface roughness is gradually reduced as removal depth increases.