In a CuInSe2 (CIS) photodiode of the P + Ntype, the extension of the space charge zone under inverse polarization leads to an increase of the initial photocurrent. The object of our work is to determine the multiplication factor leading to the determination of the ionization coefficients of electrons and holes in this material. The capacitance-voltage characteristics and the spectral responses allow first to deduce the photoelectric parameters: profile of the electric field, diffusion length of

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... the carriers, etc. Then the determination of the multiplication factor at several wavelengths is realized. Thek p and k n values thus determined for an electric field varying from 0.5 to5.8 × 10 5 V/cmexhibit a high ratio valueshowing the interest of this material for photodetection.