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Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires
2015
Journal of Applied Physics
We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the
doi:10.1063/1.4907585
fatcat:tklgfsvi3bddtolnogmnn44ysq