Semiconducting Behavior in the Molten Tl–CuTe System
Transactions of the Japan Institute of Metals
Measurements of electrical conductivity, magnetic susceptibility and thermoelectric power of the liquid Tl-CuTe system were carried out over wide temperature and composition ranges. The composition dependences of the electronic properties investigated exhibit that there are a deep minimum in electrical conductivity, a sharp maximum in diamagnetic susceptibility and a rapid change in the sign of thermoelectric power around 50 mol%Tl, which are considerably similar to the case of the well-known
... of the well-known compound-forming liquid system, Tl-Te. These experimental results suggest that the localization of valence electrons is very remarkable at the stoichiometric composition of CuTITe in the present system. In fact, the g-factor at this composition calculated by the strong scattering model is lower than 1/3 which is often used as the limiting condition when electrons in disordered systems begin to be localized. Furthermore, it is also expected through the application of the pseudogap theory to observed values of the electrical conductivity and the thermoelectric power that the carrier band structure has a marked asymmetric form in the vicinity of 50 mol%Tl in this system.