Electronic Structure of Ultrathin film of Si at the Initial stage of Oxidation
31a-YJ-1 初期化したSi超薄膜の電子状態の計算

Masahiko NISHIDA
1998 Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)  
doi:10.11316/jpsgaiyo.53.1.2.0_138_4 fatcat:3qiqclcdwjbtnhmcgtiqui66wi