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High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si͑111͒ substrates using a double-buffer technique. Growth of a ͑0001͒-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray diffraction, and Raman scattering. At room temperature, these films exhibited strong near-infrared ͑0.6 -0.9 eV͒ photoluminescence ͑PL͒. In addition to the optical absorption measurement of absorption edge anddoi:10.1063/1.1738183 fatcat:ptiuv5dezfaolcc7r5dnledzgm