Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, J.-T. Hsu
2004 Applied Physics Letters  
High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si͑111͒ substrates using a double-buffer technique. Growth of a ͑0001͒-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray diffraction, and Raman scattering. At room temperature, these films exhibited strong near-infrared ͑0.6 -0.9 eV͒ photoluminescence ͑PL͒. In addition to the optical absorption measurement of absorption edge and
more » ... bsorption edge and direct band nature, the PL signal was found to depend linearly on the excitation laser intensity over a wide intensity range. These results indicate that the observed PL is due to the emission of direct band-to-band recombination rather than the band-to-defect ͑or impurity͒ deep emission.
doi:10.1063/1.1738183 fatcat:ptiuv5dezfaolcc7r5dnledzgm