Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i ‐line stepper

Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
2021 Electronics Letters  
This article reports a high throughput 150-nm-gate AlGaN/GaN high electron mobility transistor (HEMT) process using i-line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150-nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN fieldplated HEMTs were fabricated on a semi-insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150nm gate devices exhibited
more » ... he maximum drain current of 0.65 A/mm and the gate-drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4-in. wafer.
doi:10.1049/ell2.12303 fatcat:3d3d7s3yjrakrjhbi6hbzi2ade