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This article reports a high throughput 150-nm-gate AlGaN/GaN high electron mobility transistor (HEMT) process using i-line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150-nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN fieldplated HEMTs were fabricated on a semi-insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150nm gate devices exhibiteddoi:10.1049/ell2.12303 fatcat:3d3d7s3yjrakrjhbi6hbzi2ade