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We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in 2D a photonic crystal with a modified, high-Q single defect cavity. Compared to QDs in bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase by up to a factor of 8. In contrast, off-resonant QDs indicate up to five-fold rate quenching as the local density of optical states (LDOS) is diminished in the photonic crystal. In both cases we demonstrate photondoi:10.1103/physrevlett.95.013904 pmid:16090618 fatcat:g76t7xuleba7jopiaqyozpewce