Analysis of weak anti-localization variation at the layer transition in InGaAs 2DEG bilayer
InGaAs2次元電子ガス2層系における層転移に伴う弱反局在現象変化の解析

S. Yamada, A. Fujimoto, S. Hidaka, M. Akabori
2018 Meeting Abstracts of the Physical Society of Japan  
doi:10.11316/jpsgaiyo.73.2.0_793 fatcat:by4uefg2xvg2njz6vhi46khrxu