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A : The "trap pumping" technique has seen considerable use over recent years as a means to probe the intrinsic properties of silicon defects that can impact charge transfer performance within CCD-based technologies. While the theory behind the technique is reasonably well understood, it has to date only been applied to relatively simple pixel designs where the motion of charge between pixel phases is fairly easy to predict. For some devices, the intrinsic pixel architecture is more complex anddoi:10.1088/1748-0221/13/02/c02025 fatcat:tq6k5q6tmvhltowosy5riram5a