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Size and shape control of sub-20 nm patterns fabricated using focused electron beam induced processing
2014
Alternative Lithographic Technologies VI
In a first study to analyze the feasibility of electron beam-induced deposition (EBID) for creating certain patterns in advanced lithography, line patterns were fabricated on silicon wafers using EBID. The growth conditions were such that the growth rate is fully determined by the electron flux (the current limited growth regime). It is experimentally verified that different patterning strategies, such as serial versus parallel patterning and single pass patterning versus multiple pass
doi:10.1117/12.2046356
fatcat:efamrsrnyfg75l6sadjgwdqe5q