Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Jin-Yu Shiu, Jui-Chien Huang, Vincent Desmaris, Chia-Ta Chang, Chung-Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang
2007 IEEE Electron Device Letters  
A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate.
more » ... phire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall. Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.
doi:10.1109/led.2007.896904 fatcat:t46sqx63cngkbg5ultayq7dtki