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A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate.doi:10.1109/led.2007.896904 fatcat:t46sqx63cngkbg5ultayq7dtki