A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf
.
Development of novel semiconductor based photodetector devices
2020
This thesis investigates novel range semiconductor materials and structures for use in optoelectronic devices operating from UV to mid-IR. These devices have an abundant variety of applications, including optical communications and imaging. The studies primarily focus on the electronic band structure of the materials and how this impacts device performance. Dilute bismide III-V alloys are a material of great interest for IR applications, especially with the band structure engineering that can
doi:10.15126/thesis.00853686
fatcat:3egyswvxzvg3rfbarw25hj3lly