Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor

Kenji Nomura, Wensheng Wang, Hideshi Yamaguchi, Ko Nakamura, Takashi Eshita, Soichiro Ozawa, Kazuaki Takai, Satoru Mihara, Yukinobu Hikosaka, Makoto Hamada, Manabu Kojima, Yuji Kataoka
2018 Japanese Journal of Applied Physics  
doi:10.7567/jjap.57.11uf01 fatcat:i5k2e5pxr5g4fn74flhek4kgty