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2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems
Phase change memory (PCM) uses rapid heating and cooling to induce switching in sub-micron memory cells. The rapid rates of heating and nanoscale dimensions require accurate modeling of thermal transport phenomena in the constituent materials. This motivates improved understanding of the thermal properties of Ge 2 Sb 2 Te 5 (GST) thin films and PCM electrode materials. We report measurements of thermal conductivity and interface resistance of GST and electrode materials by applying nanoseconddoi:10.1109/itherm.2010.5501263 fatcat:yncgrof5cndafhrjqgifcnmrza