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We experimentally studied the optimization of the hot-C + -ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-oninsulator substrate at various hot-C + -ion implantation temperatures and C + ion doses to improve photoluminescence (PL) intensity for future Sibased photonic devices. We successfully optimized the process by hot-C + -ion implantation at a temperature of about 700°C and a C + ion dose of approximately 4 ' 10 16 cm %2 to realize a high intensity ofdoi:10.7567/jjap.57.04fb03 fatcat:ipa24ewspve2tlwwhj6dcogske