Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

Tomohisa Mizuno, Yuhsuke Omata, Rikito Kanazawa, Yusuke Iguchi, Shinji Nakada, Takashi Aoki, Tomokazu Sasaki
2018 Japanese Journal of Applied Physics  
We experimentally studied the optimization of the hot-C + -ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-oninsulator substrate at various hot-C + -ion implantation temperatures and C + ion doses to improve photoluminescence (PL) intensity for future Sibased photonic devices. We successfully optimized the process by hot-C + -ion implantation at a temperature of about 700°C and a C + ion dose of approximately 4 ' 10 16 cm %2 to realize a high intensity of
more » ... high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.
doi:10.7567/jjap.57.04fb03 fatcat:ipa24ewspve2tlwwhj6dcogske