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Numerical calculations and experimental results show that, for the broad range of tensile strained p-Al x Ga 1-x As/GaAs 1-y P y /n-Al x Ga 1-x As heterostructures widely used in commercial laser diodes emitting at 766 -808 nm, polarization of emitted light may be extremely sensitive to external uniaxial stress due to the change of wave functions symmetry and possible optical transitions in the quantum well levels system. In some heterostructures with quantum well width of 10 nm and phosphorusdoi:10.1088/1742-6596/950/4/042047 fatcat:hrsgxknfzza3vn56xivmmyildi