Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress

E V Bogdanov, K I Kolokolov, N V Melnikova, N Ya Minina, G V Tikhomirova
2017 Journal of Physics, Conference Series  
Numerical calculations and experimental results show that, for the broad range of tensile strained p-Al x Ga 1-x As/GaAs 1-y P y /n-Al x Ga 1-x As heterostructures widely used in commercial laser diodes emitting at 766 -808 nm, polarization of emitted light may be extremely sensitive to external uniaxial stress due to the change of wave functions symmetry and possible optical transitions in the quantum well levels system. In some heterostructures with quantum well width of 10 nm and phosphorus
more » ... nm and phosphorus content below 0.08, TM/TE polarization mode relation showcases a several times decrease and even dominant polarization mode switching under moderate compression of about 5 -6 kbar in [100] and [110] directions. At the same time switching from TE to TM mode is possible under compression in [001] direction.
doi:10.1088/1742-6596/950/4/042047 fatcat:hrsgxknfzza3vn56xivmmyildi