A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2022; you can also visit the original URL.
The file type is application/pdf.
Formation of ZnO memristor structures by scratching probe nanolithography
2018
IOP Conference Series: Materials Science and Engineering
Preserved Fulltext
This work presents the results of the formation and investigation of Al2O3/ZnO:In/ZnO/Ti memristor structures. It is shown that using Ti layer can improve memristive effect. Resistive switching from high resistance state (HRS) to low resistance state (LRS) occurred at 2.1±0.3 V, and from LRS to HRS at -1.5±0.3 V. Endurance test showed that HRS was 5.51±0.13 GΩ and LRS was 0.25±0.05 GΩ. HRS/LRS coefficient equalled to 22. The results can be useful for micro-and nanoelectronics elements
doi:10.1088/1757-899x/443/1/012036
fatcat:3jvsaelqxza3xb3ejgfhntfbm4