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Unipolar Ni/GeO$_{x}$/PbZr$_{0.5}$Ti$_{0.5}$O$_{3}$/TaN Resistive Switching Memory
2011
Japanese Journal of Applied Physics
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In this study we propose a resistive random-access memory (RRAM) using stacked GeO x and PbZr 0:5 Ti 0:5 O 3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeO x /PZT/TaN RRAM shows a large resistance window of >10 2 , for 85 C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO x .
doi:10.1143/jjap.50.121801
fatcat:rwu2ryfk35ekzccwpdoge5wxpa